Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by...

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Bibliographic Details
Main Authors: Zhenzhen Kong, Guilei Wang, Renrong Liang, Jiale Su, Meng Xun, Yuanhao Miao, Shihai Gu, Junjie Li, Kaihua Cao, Hongxiao Lin, Ben Li, Yuhui Ren, Junfeng Li, Jun Xu, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Nanomaterials
Subjects:
GeSn growth
selective etch
strain modulation
RPCVD
Online Access:https://www.mdpi.com/2079-4991/12/6/981

Internet

https://www.mdpi.com/2079-4991/12/6/981

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