On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen
In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF<sub>4</sub> + O<sub>2</sub>, CHF<sub>3</sub> + O<sub>2</sub>, and C<sub>4</sub>F<sub>8...
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MDPI AG
2023-07-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/14/5043 |
| _version_ | 1797588515754606592 |
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| author | Seung Yong Baek Alexander Efremov Alexander Bobylev Gilyoung Choi Kwang-Ho Kwon |
| author_facet | Seung Yong Baek Alexander Efremov Alexander Bobylev Gilyoung Choi Kwang-Ho Kwon |
| author_sort | Seung Yong Baek |
| collection | DOAJ |
| description | In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF<sub>4</sub> + O<sub>2</sub>, CHF<sub>3</sub> + O<sub>2</sub>, and C<sub>4</sub>F<sub>8</sub> + O<sub>2</sub> gas mixtures. It was shown that the addition of O<sub>2</sub> changes electrons- and ions-related plasma parameters rapidly suppresses densities of CF<sub>x</sub> radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface. |
| first_indexed | 2024-03-11T00:53:09Z |
| format | Article |
| id | doaj.art-bc79398fe7d646e6abcd2cffe3036436 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T00:53:09Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-bc79398fe7d646e6abcd2cffe30364362023-11-18T20:17:08ZengMDPI AGMaterials1996-19442023-07-011614504310.3390/ma16145043On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with OxygenSeung Yong Baek0Alexander Efremov1Alexander Bobylev2Gilyoung Choi3Kwang-Ho Kwon4Department of Computer Science and Technology, Korea University, Sejong 30019, Republic of KoreaDepartment of Electronic Devices & Materials Technology, State University of Chemistry & Technology, 7 Sheremetevsky av., Ivanovo 153000, RussiaDepartment of Electronic Devices & Materials Technology, State University of Chemistry & Technology, 7 Sheremetevsky av., Ivanovo 153000, RussiaDepartment of Control and Instrumentation Engineering, Korea University, Sejong 30019, Republic of KoreaDepartment of Control and Instrumentation Engineering, Korea University, Sejong 30019, Republic of KoreaIn this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF<sub>4</sub> + O<sub>2</sub>, CHF<sub>3</sub> + O<sub>2</sub>, and C<sub>4</sub>F<sub>8</sub> + O<sub>2</sub> gas mixtures. It was shown that the addition of O<sub>2</sub> changes electrons- and ions-related plasma parameters rapidly suppresses densities of CF<sub>x</sub> radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface.https://www.mdpi.com/1996-1944/16/14/5043fluorocarbon gasesactive speciesionizationdissociationetching |
| spellingShingle | Seung Yong Baek Alexander Efremov Alexander Bobylev Gilyoung Choi Kwang-Ho Kwon On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen Materials fluorocarbon gases active species ionization dissociation etching |
| title | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen |
| title_full | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen |
| title_fullStr | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen |
| title_full_unstemmed | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen |
| title_short | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF<sub>4</sub>, CHF<sub>3</sub>, and C<sub>4</sub>F<sub>8</sub> Gases Mixed with Oxygen |
| title_sort | on relationships between plasma chemistry and surface reaction kinetics providing the etching of silicon in cf sub 4 sub chf sub 3 sub and c sub 4 sub f sub 8 sub gases mixed with oxygen |
| topic | fluorocarbon gases active species ionization dissociation etching |
| url | https://www.mdpi.com/1996-1944/16/14/5043 |
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