Monolithic 3D 6T-SRAM Based on Newly Designed Gate and Source/Drain Bottom Contact Schemes
For the first time, we suggested that the monolithic 3D (M3D) static random access memory (SRAM) with gate and S/D bottom contact (GBC and SDBC) schemes (SRAM<sub>SDGBC</sub>) and analyzed they could significantly improve the power, performance, and area (PPA) compared to the conventiona...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9558762/ |