Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of...

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Bibliographic Details
Main Authors: Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Materials
Subjects:
thermal gate oxide
SiC
MOSFET
charge-driven breakdown
<i>Q<sub>BD</sub></i>
CCS
Online Access:https://www.mdpi.com/1996-1944/17/7/1455

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https://www.mdpi.com/1996-1944/17/7/1455

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