Fabrication and quantum sensing of spin defects in silicon carbide

Fabrication and quantum sensing of spin defects in silicon carbide

In the past decade, color centers in silicon carbide (SiC) have emerged as promising platforms for various quantum information technologies. There are three main types of color centers in SiC: silicon-vacancy centers, divacancy centers, and nitrogen-vacancy centers. Their spin states can be polarize...

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Bibliographic Details
Main Authors: Qin-Yue Luo, Qiang Li, Jun-Feng Wang, Pei-Jie Guo, Wu-Xi Lin, Shuang Zhao, Qi-Cheng Hu, Zi-Qi Zhu, Jin-Shi Xu, Chuan-Feng Li, Guang-Can Guo
Format: Article
Language:English
Published: Frontiers Media S.A. 2023-09-01
Series:Frontiers in Physics
Subjects:
spin defects
fabrication
quantum sensing
silicon carbide
high pressure
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2023.1270602/full

Internet

https://www.frontiersin.org/articles/10.3389/fphy.2023.1270602/full

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