Ni and Ni Silicides Ohmic Contacts on N-type 6H-SiC with Medium and Low Doping Level
Ni silicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structures were ohmic with low contact resistivity approximately 8×10-4 Ω cm2 after annealing at 960°C as far as the SiC substrate with a medium doping level was concerne...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2011-04-01
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| Series: | Radioengineering |
| Subjects: | |
| Online Access: | http://www.radioeng.cz/fulltexts/2011/11_01_209_213.pdf |