Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals
Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculat...
| Main Authors: | , , , |
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| Format: | Article |
| Jezik: | English |
| Izdano: |
MDPI AG
2022-01-01
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| Serija: | Crystals |
| Teme: | |
| Online dostop: | https://www.mdpi.com/2073-4352/12/2/174 |