Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals

Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals

Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculat...

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Bibliographic Details
Main Authors: Andrejs Sabanskis, Kaspars Dadzis, Robert Menzel, Jānis Virbulis
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Crystals
Subjects:
computer simulation
line defects (dislocations)
stresses
semiconducting silicon
floating zone technique
Online Access:https://www.mdpi.com/2073-4352/12/2/174

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