Comparison of GaN Enhancement Mode Transistor Performance With Integrated and External Driver

Comparison of GaN Enhancement Mode Transistor Performance With Integrated and External Driver

GaN components allow to reduce power losses as the lower specific on-resistance and higher switching speeds reduce both the conduction and switching loss. However, parasitics in the gate loop cause ringing which endangers the component. To counteract these problems the switching speed is lowered ren...

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Bibliographic Details
Main Authors: Martijn Deckers, Simon Ravyts, Mauricio Dalla Vecchia, Urmimala Chatterjee, Johan Driesen
Format: Article
Language:English
Published: Elsevier 2022-06-01
Series:Power Electronic Devices and Components
Subjects:
GaN HEMTs
integrated driver
GaN-on-SOI
half-bridge
enhancement mode
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370422000013

Internet

http://www.sciencedirect.com/science/article/pii/S2772370422000013

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