The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices
The thermal evaporation technique has been frequently used for the deposition of sub-stoichiometric molybdenum oxide (MoO3) films. This approach requires a high temperature, which limits the control of MoO3 stoichiometry and affects its conducting mechanism. In this study, a spray pyrolysis techniqu...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-02-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723000220 |
| _version_ | 1797924726997254144 |
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| author | Bashir Yusuf Md Roslan Hashim Mohd Mahadi Halim |
| author_facet | Bashir Yusuf Md Roslan Hashim Mohd Mahadi Halim |
| author_sort | Bashir Yusuf |
| collection | DOAJ |
| description | The thermal evaporation technique has been frequently used for the deposition of sub-stoichiometric molybdenum oxide (MoO3) films. This approach requires a high temperature, which limits the control of MoO3 stoichiometry and affects its conducting mechanism. In this study, a spray pyrolysis technique (SPT) has been used to grow MoO3 film by varying the pH solution. The formation of an orthorhombic lamellar crystal structure with (0 k0) preferred orientation was realized using X-ray diffraction analysis. FESEM analysis confirmed pH solution dependence on the particle growth properties. The vibrational peaks of the Raman spectra justified the presence of the sub-stochiometric α-MoO3 film. The p-n heterojunction diodes constructed based on the Ag/MoO3/n-Si/Al showed a well-defined rectifying behaviour with the film deposited at 0.6 pH solution. |
| first_indexed | 2024-04-10T15:05:42Z |
| format | Article |
| id | doaj.art-bd35fc3f09df4192ba9a89617ab3b6a1 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-10T15:05:42Z |
| publishDate | 2023-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-bd35fc3f09df4192ba9a89617ab3b6a12023-02-15T04:27:55ZengElsevierResults in Physics2211-37972023-02-0145106229The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devicesBashir Yusuf0Md Roslan Hashim1Mohd Mahadi Halim2Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia; Department of Physics, Ahmadu Bello University-Zaria, 810001 Kaduna, NigeriaNano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia; Corresponding author.Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, MalaysiaThe thermal evaporation technique has been frequently used for the deposition of sub-stoichiometric molybdenum oxide (MoO3) films. This approach requires a high temperature, which limits the control of MoO3 stoichiometry and affects its conducting mechanism. In this study, a spray pyrolysis technique (SPT) has been used to grow MoO3 film by varying the pH solution. The formation of an orthorhombic lamellar crystal structure with (0 k0) preferred orientation was realized using X-ray diffraction analysis. FESEM analysis confirmed pH solution dependence on the particle growth properties. The vibrational peaks of the Raman spectra justified the presence of the sub-stochiometric α-MoO3 film. The p-n heterojunction diodes constructed based on the Ag/MoO3/n-Si/Al showed a well-defined rectifying behaviour with the film deposited at 0.6 pH solution.http://www.sciencedirect.com/science/article/pii/S2211379723000220pH solutionMoO3/n-Si heterojunction diodeMoO3 thin filmsSpray pyrolysis technique |
| spellingShingle | Bashir Yusuf Md Roslan Hashim Mohd Mahadi Halim The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices Results in Physics pH solution MoO3/n-Si heterojunction diode MoO3 thin films Spray pyrolysis technique |
| title | The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices |
| title_full | The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices |
| title_fullStr | The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices |
| title_full_unstemmed | The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices |
| title_short | The role of pH solution in depositing MoO3 film by spray pyrolysis as hole selective contact on silicon-based heterojunction devices |
| title_sort | role of ph solution in depositing moo3 film by spray pyrolysis as hole selective contact on silicon based heterojunction devices |
| topic | pH solution MoO3/n-Si heterojunction diode MoO3 thin films Spray pyrolysis technique |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723000220 |
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