Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been an...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0071552 |