Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Memristor devices fabricated using the chalcogenide Ge2Te3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) an...

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Bibliographic Details
Main Authors: Austin Shallcross, Krishnamurthy Mahalingam, Eunsung Shin, Guru Subramanyam, Md Shahanur Alam, Tarek Taha, Sabyasachi Ganguli, Cynthia Bowers, Benson Athey, Albert Hilton, Ajit Roy, Rohan Dhall
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-04-01
Series:Frontiers in Electronics
Subjects:
memristor
chalcogenide
phase change materials
resistive switching
resistive memory
TEM
Online Access:https://www.frontiersin.org/articles/10.3389/felec.2022.872163/full

Internet

https://www.frontiersin.org/articles/10.3389/felec.2022.872163/full

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