Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory

Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory

Molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and...

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Bibliographic Details
Main Authors: Yu Zhang, Xiong Chen, Hao Zhang, Xicheng Wei, Xiangfeng Guan, Yonghua Wu, Shaozu Hu, Jiale Zheng, Guidong Wang, Jiawen Qiu, Jun Wang
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Applied Sciences
Subjects:
fermi-level pinning
MoS<sub>2</sub>
field-effect transistors
thermionic emission theory
Online Access:https://www.mdpi.com/2076-3417/10/8/2754

Internet

https://www.mdpi.com/2076-3417/10/8/2754

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