Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory
Molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and...
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MDPI AG
2020-04-01
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| author | Yu Zhang Xiong Chen Hao Zhang Xicheng Wei Xiangfeng Guan Yonghua Wu Shaozu Hu Jiale Zheng Guidong Wang Jiawen Qiu Jun Wang |
| author_facet | Yu Zhang Xiong Chen Hao Zhang Xicheng Wei Xiangfeng Guan Yonghua Wu Shaozu Hu Jiale Zheng Guidong Wang Jiawen Qiu Jun Wang |
| author_sort | Yu Zhang |
| collection | DOAJ |
| description | Molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm<sup>2</sup>/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal–semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects. |
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| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T20:26:26Z |
| publishDate | 2020-04-01 |
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| spelling | doaj.art-bd5a0ebcca074d0a9835b185f4dadac92023-11-19T21:48:54ZengMDPI AGApplied Sciences2076-34172020-04-01108275410.3390/app10082754Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission TheoryYu Zhang0Xiong Chen1Hao Zhang2Xicheng Wei3Xiangfeng Guan4Yonghua Wu5Shaozu Hu6Jiale Zheng7Guidong Wang8Jiawen Qiu9Jun Wang10School of Materials Science and Engineering, Shanghai University, Shanghai 200444, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaSchool of Materials Science and Engineering, Shanghai University, Shanghai 200444, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, ChinaCollege of Science, Shanghai Institute of Technology, Shanghai 201418, ChinaMolybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm<sup>2</sup>/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal–semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects.https://www.mdpi.com/2076-3417/10/8/2754fermi-level pinningMoS<sub>2</sub>field-effect transistorsthermionic emission theory |
| spellingShingle | Yu Zhang Xiong Chen Hao Zhang Xicheng Wei Xiangfeng Guan Yonghua Wu Shaozu Hu Jiale Zheng Guidong Wang Jiawen Qiu Jun Wang Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory Applied Sciences fermi-level pinning MoS<sub>2</sub> field-effect transistors thermionic emission theory |
| title | Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory |
| title_full | Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory |
| title_fullStr | Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory |
| title_full_unstemmed | Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory |
| title_short | Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory |
| title_sort | fermi level pinning mechanism in mos sub 2 sub field effect transistors developed by thermionic emission theory |
| topic | fermi-level pinning MoS<sub>2</sub> field-effect transistors thermionic emission theory |
| url | https://www.mdpi.com/2076-3417/10/8/2754 |
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