Sublayer-Enhanced Growth of Highly Ordered Mn<sub>5</sub>Ge<sub>3</sub> Thin Film on Si(111)

Sublayer-Enhanced Growth of Highly Ordered Mn<sub>5</sub>Ge<sub>3</sub> Thin Film on Si(111)

Mn<sub>5</sub>Ge<sub>3</sub> epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely po...

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Bibliographic Details
Main Authors: Ivan Yakovlev, Ivan Tarasov, Anna Lukyanenko, Mikhail Rautskii, Leonid Solovyov, Alexander Sukhachev, Mikhail Volochaev, Dmitriy Efimov, Aleksandr Goikhman, Ilya Bondarev, Sergey Varnakov, Sergei Ovchinnikov, Nikita Volkov, Anton Tarasov
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Nanomaterials
Subjects:
manganese germanide
thin film
MBE
ferromagnetism
sublayer
Online Access:https://www.mdpi.com/2079-4991/12/24/4365

Internet

https://www.mdpi.com/2079-4991/12/24/4365

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