Post-annealing in ultra-high vacuum or nitrogen plasma for MoS2 thin films deposited by magnetron sputtering

The thin films of amorphous molybdenum disulfide were deposited at room temperature by magnetron sputtering technique. Post-annealing process in ultra-high vacuum (∼10−8 Pa) or nitrogen plasma environments at the temperatures of 300, 400, 500, and 700 °C have been first proposed to enhance the micro...

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Bibliographic Details
Main Authors: Chih Chao, Ping-Yu Tsai, Po-Hung Wu, Ray-Yu Hong, Ing-Song Yu
Format: Article
Language:English
Published: AIP Publishing LLC 2024-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/6.0003229