Simulation of the processes of the electrons transfer in the semiconductor structure based on graphene
The results of modeling of electron transfer processes in a three-dimensional semiconductor structure containing a single layer of graphene using the Monte-Carlo method are presented. The use of graphene, which has a high mobility of charge carriers, high thermal conductivity and a number of other p...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/1132 |