Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. W...

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Bibliographic Details
Main Authors: Yacine Halfaya, Chris Bishop, Ali Soltani, Suresh Sundaram, Vincent Aubry, Paul L. Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden
Format: Article
Language:English
Published: MDPI AG 2016-02-01
Series:Sensors
Subjects:
AlGaN/GaN heterostructure
HEMT transistor
NOx and NH3
automotive exhaust line
gas sensor
Online Access:http://www.mdpi.com/1424-8220/16/3/273

Internet

http://www.mdpi.com/1424-8220/16/3/273

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