A photodetector based on p-GaN/N-MoS2 QDs heterojunction with high responsivity

A photodetector based on p-GaN/N-MoS2 QDs heterojunction with high responsivity

Molybdenum disulfide (MoS _2 ) is the most thoroughly investigated for photodetection applications with direct bandgap transition in low-dimensional structures, high light–matter interaction, and good carrier mobility. In this work, MoS _2 quantum dots was synthesis by liquid exfoliation and charact...

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Bibliographic Details
Main Authors: Maymunah A Alwehaibi, Yasmeen A Khoja, Reem S Alghamdi, Fahdah A Alsuhaibani, Manar S Alshatwi, Ahmed A Aldamegh, Sarah A Aldakheel, Abdulaziz Alromaeh, Norah M Alwadi
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Materials Research Express
Subjects:
molybdenum disulfide
quantum dots
MoS2 QDs
transition metal dichalcogenides
2D material
photodetector
Online Access:https://doi.org/10.1088/2053-1591/ad22b6

Internet

https://doi.org/10.1088/2053-1591/ad22b6

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