Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
Exploring two-dimensional layered ferroelectric semiconductors is highly desired for ferroelectric-based devices. Here, the authors realize the room-temperature ferroelectricity in layered Y-doped γ-InSe due to the microstructure modifications.
| Автори: | , , , , , , , |
|---|---|
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Nature Portfolio
2023-01-01
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| Серія: | Nature Communications |
| Онлайн доступ: | https://doi.org/10.1038/s41467-022-35490-0 |