Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding

Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding

In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation...

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Bibliographic Details
Main Authors: Song Yang, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu, Hongxing Wang
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Materials
Subjects:
surface activated bonding
room-temperature Si-Si bonding
Ar ion beam irradiation
bonding interface
Online Access:https://www.mdpi.com/1996-1944/15/9/3115

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https://www.mdpi.com/1996-1944/15/9/3115

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