A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the re...

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Bibliographic Details
Main Authors: Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, Rémi Beneyton, Pablo Acosta Alba, Sébastien Kerdilès, Filadelfo Cristiano
Format: Article
Language:English
Published: Beilstein-Institut 2018-07-01
Series:Beilstein Journal of Nanotechnology
Subjects:
carrier mobility
contact resistance
differential Hall effect
dopant activation
fully depleted silicon on insulator (FDSOI)
laser annealing
sub-nanometre resolution
Online Access:https://doi.org/10.3762/bjnano.9.184

Internet

https://doi.org/10.3762/bjnano.9.184

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