A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers
In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the re...
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2018-07-01
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| Series: | Beilstein Journal of Nanotechnology |
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| Online Access: | https://doi.org/10.3762/bjnano.9.184 |
| _version_ | 1828432287962759168 |
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| author | Richard Daubriac Emmanuel Scheid Hiba Rizk Richard Monflier Sylvain Joblot Rémi Beneyton Pablo Acosta Alba Sébastien Kerdilès Filadelfo Cristiano |
| author_facet | Richard Daubriac Emmanuel Scheid Hiba Rizk Richard Monflier Sylvain Joblot Rémi Beneyton Pablo Acosta Alba Sébastien Kerdilès Filadelfo Cristiano |
| author_sort | Richard Daubriac |
| collection | DOAJ |
| description | In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH/H2O2/H2O) with its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.5 nm, is demonstrated on a dedicated 20 nm thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles. |
| first_indexed | 2024-12-10T18:17:41Z |
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| id | doaj.art-beb5310ee07740d2b625e34f42a24125 |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-10T18:17:41Z |
| publishDate | 2018-07-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-beb5310ee07740d2b625e34f42a241252022-12-22T01:38:18ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-07-01911926193910.3762/bjnano.9.1842190-4286-9-184A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layersRichard Daubriac0Emmanuel Scheid1Hiba Rizk2Richard Monflier3Sylvain Joblot4Rémi Beneyton5Pablo Acosta Alba6Sébastien Kerdilès7Filadelfo Cristiano8LAAS-CNRS and Univ. of ToulouseLAAS-CNRS and Univ. of ToulouseLAAS-CNRS and Univ. of ToulouseLAAS-CNRS and Univ. of ToulouseSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, FranceSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, FranceCEA-LETI and Univ. of Grenoble, 17 rue des Martyrs, 38054 Grenoble, FranceCEA-LETI and Univ. of Grenoble, 17 rue des Martyrs, 38054 Grenoble, FranceLAAS-CNRS and Univ. of ToulouseIn this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH/H2O2/H2O) with its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.5 nm, is demonstrated on a dedicated 20 nm thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles.https://doi.org/10.3762/bjnano.9.184carrier mobilitycontact resistancedifferential Hall effectdopant activationfully depleted silicon on insulator (FDSOI)laser annealingsub-nanometre resolution |
| spellingShingle | Richard Daubriac Emmanuel Scheid Hiba Rizk Richard Monflier Sylvain Joblot Rémi Beneyton Pablo Acosta Alba Sébastien Kerdilès Filadelfo Cristiano A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers Beilstein Journal of Nanotechnology carrier mobility contact resistance differential Hall effect dopant activation fully depleted silicon on insulator (FDSOI) laser annealing sub-nanometre resolution |
| title | A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers |
| title_full | A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers |
| title_fullStr | A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers |
| title_full_unstemmed | A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers |
| title_short | A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers |
| title_sort | differential hall effect measurement method with sub nanometre resolution for active dopant concentration profiling in ultrathin doped si1 xgex and si layers |
| topic | carrier mobility contact resistance differential Hall effect dopant activation fully depleted silicon on insulator (FDSOI) laser annealing sub-nanometre resolution |
| url | https://doi.org/10.3762/bjnano.9.184 |
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