Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Abstract In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H‐SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3). After assessing the excellent thickness unif...

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Bibliographic Details
Main Authors: Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Materials Interfaces
Subjects:
conductive atomic force microscopy
heterojunction diodes
MoS 2
pulsed laser deposition
silicon carbide
Online Access:https://doi.org/10.1002/admi.202201502

Internet

https://doi.org/10.1002/admi.202201502

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