VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector
This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/8/1871 |