Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers
Semi-polar 101̄1 green InGaN light-emitting diodes with different quantum barrier materials were numerically investigated by considering the In composition fluctuation model. For the green light-emitting diode using quaternary Al0.05In0.1Ga0.85N quantum barriers with low Al content, the electric fie...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0079948 |