A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) technology is considered to be the most promising nonvolatile memory (NVM) solution for high-speed and low power applications. Dual MgO-based composite free layers (FL) have driven the development of STT-MRAMs over the past decade...

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Bibliographic Details
Main Authors: Siddharth Rao, Sebastien Couet, Simon Van Beek, Shreya Kundu, Shamin Houshmand Sharifi, Nico Jossart, Gouri Sankar Kar
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Electronics
Subjects:
STT-MRAM
spintronics
CoFeB
composite free layer
low power electronics
Online Access:https://www.mdpi.com/2079-9292/10/19/2384

Internet

https://www.mdpi.com/2079-9292/10/19/2384

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