Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Institute of Telecommunications
2023-06-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/837 |