High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Abstract Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity....

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Bibliographic Details
Main Authors: Xiaohua Zhu, Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
boron‐doped
H‐termination
metal‐oxide‐semiconductor field‐effect transistor (MOSFET)
normally‐off/normally‐on devices
polycrystalline diamond
Online Access:https://doi.org/10.1002/aelm.202201122

Internet

https://doi.org/10.1002/aelm.202201122

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