Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implemen...

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Bibliographic Details
Main Authors: Hyeonjeong Kim, Songyi Yoo, In-Man Kang, Seongjae Cho, Wookyung Sun, Hyungsoon Shin
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Micromachines
Subjects:
one-transistor dynamic random-access memory (1t-dram)
polysilicon
grain boundary
electron trapping
Online Access:https://www.mdpi.com/2072-666X/11/2/228

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https://www.mdpi.com/2072-666X/11/2/228

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