Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3
We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal recti...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-05-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4952609 |