Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

We propose a novel structure of a charge trapping layer, that is doped between Word Line(WL) spaces in 3D NAND flash memory. To estimate the retention characteristics, the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{V}_{\mathrm {th}}$ </tex-math></inline-...

Full description

Bibliographic Details
Main Authors: Hyewon Kyung, Yunejae Suh, Youngho Jung, Daewoong Kang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
3D NAND
doped SiN layer
electrostatic potential
lateral charge spreading
SRH recombination
Online Access:https://ieeexplore.ieee.org/document/10478720/

Internet

https://ieeexplore.ieee.org/document/10478720/

Similar Items