High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer

We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional device without an in situ cap layer. The pulse charact...

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Bibliographic Details
Main Authors: Ki-Sik Im, Siva Pratap Reddy Mallem, Jin-Seok Choi, Young-Min Hwang, Jae-Seung Roh, Sung-Jin An, Jae-Hoon Lee
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Nanomaterials
Subjects:
AlGaN/GaN HEMT
in situ cap layer
low-frequency noise
pulse measurement
Online Access:https://www.mdpi.com/2079-4991/12/4/643

Internet

https://www.mdpi.com/2079-4991/12/4/643

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