Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset

Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset

Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses this gap by establishing a FinFET SRAM simula...

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Bibliographic Details
Main Authors: Hongwei Zhang, Yang Guo, Shida Wang, Yi Sun, Bo Mei, Min Tang, Jingyi Liu
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
FinFET
SRAM
charge collection
bipolar amplification effects
Online Access:https://www.mdpi.com/2072-666X/15/2/201

Internet

https://www.mdpi.com/2072-666X/15/2/201

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