Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset
Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses this gap by establishing a FinFET SRAM simula...
Main Authors: | Hongwei Zhang, Yang Guo, Shida Wang, Yi Sun, Bo Mei, Min Tang, Jingyi Liu |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2024-01-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/15/2/201 |
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