Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current
In this paper, an N-type silicon line tunneling TFET (LT-TFET) with an ultra-shallow N<sup>+</sup> pocket was proposed. The pocket was formed by using the germanium preamorphization implantation (Ge PAI), arsenic ultra-low energy implantation and spike annealing. Due to the Ge PAI, the t...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9042826/ |