High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO<sub>2</sub> Thin Film with Non-Identical Pulse Waveforms

High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO<sub>2</sub> Thin Film with Non-Identical Pulse Waveforms

We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO<sub>2</sub> thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properties, including memory window...

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Bibliographic Details
Main Authors: Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
electrical synapse
synaptic plasticity
argon plasma treatment
non-identical pulse waveforms
Online Access:https://www.mdpi.com/2079-4991/12/18/3252

Internet

https://www.mdpi.com/2079-4991/12/18/3252

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