Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

Abstract High-density Cs2AgBiBr6 films with uniform grains were prepared by a simple one-step and low-temperature sol–gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs2 AgBiBr6/ITO/glass devices under irradiation of...

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Bibliographic Details
Main Authors: Tingting Zhong, Yongfu Qin, Fengzhen Lv, Haijun Qin, Xuedong Tian
Format: Article
Language:English
Published: SpringerOpen 2021-12-01
Series:Nanoscale Research Letters
Subjects:
Light regulation
Cs2 AgBiBr6
Multilevel resistive switching
Bromine vacancy
Space charge-limited current mechanism
Schottky-like barrier
Online Access:https://doi.org/10.1186/s11671-021-03636-6

Internet

https://doi.org/10.1186/s11671-021-03636-6

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