METHOD OF IONIC MIXING FOR SILICIDE LAYER FORMATION
Ion implantation with recoil ions or ion mixing based on the introduction of the required impurity from the surface layers during the transfer of the kinetic energy of the primary beam to them have great prospects for obtaining structures and compounds with desired properties. In the process of rang...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Tver State University
2020-12-01
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| Series: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
| Subjects: | |
| Online Access: | https://physchemaspects.ru/2020/doi-10-26456-pcascnn-2020-12-868/ |