Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual sub...

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Bibliographic Details
Main Authors: Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Nanomaterials
Subjects:
Si photonics
InAs/GaAs lasers
epitaxial growth
GaAs virtual substrate
Online Access:https://www.mdpi.com/2079-4991/12/15/2704

Internet

https://www.mdpi.com/2079-4991/12/15/2704

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