Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures

Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures

Abstract To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations are growth on non‐native substrates and heter...

Full description

Bibliographic Details
Main Authors: Maryam Khalilian, Axel Persson, David Lindgren, Martin Rosén, Filip Lenrick, Jovana Colvin, B. Jonas Ohlsson, Rainer Timm, Reine Wallenberg, Lars Samuelson, Anders Gustafsson
Format: Article
Language:English
Published: Wiley-VCH 2022-02-01
Series:Nano Select
Subjects:
AlGaN
dislocation‐free
III‐nitride
micro‐platelets
optoelectronics
Online Access:https://doi.org/10.1002/nano.202100154

Internet

https://doi.org/10.1002/nano.202100154

Similar Items