Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures

Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures

Abstract To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations are growth on non‐native substrates and heter...

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Bibliographic Details
Main Authors: Maryam Khalilian, Axel Persson, David Lindgren, Martin Rosén, Filip Lenrick, Jovana Colvin, B. Jonas Ohlsson, Rainer Timm, Reine Wallenberg, Lars Samuelson, Anders Gustafsson
Format: Article
Language:English
Published: Wiley-VCH 2022-02-01
Series:Nano Select
Subjects:
AlGaN
dislocation‐free
III‐nitride
micro‐platelets
optoelectronics
Online Access:https://doi.org/10.1002/nano.202100154

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