Arrhenius behavior of crystallization at up to 184 000 K/s in Ge2Sb2Te5 thin films
We investigate the glass transition and crystallization of Ge2Sb2Te5 by nanocalorimetry on 32–57 nm layers at temperature scanning rates ranging from 23 to 184 kK/s. Crystallization follows the Arrhenius behavior observed at low heating rates, with an activation energy of 2.7 ± 0.1 eV. The crystal-g...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0058586 |