Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance
The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k < 2.4) was engineered using plasma-enhanced chemical vapor deposition and electron-beam curing. The high carbon concentration in the SiOC films with di-methyl bonds (Si(CH3)2) is crucial for resistance to...
| 主要な著者: | , , , , , |
|---|---|
| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
Elsevier
2019-05-01
|
| シリーズ: | Micro and Nano Engineering |
| オンライン･アクセス: | http://www.sciencedirect.com/science/article/pii/S2590007219300097 |