Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers

Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers

Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelength...

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Bibliographic Details
Main Authors: Yu-Hsun Huang, Zi-Xian Yang, Su-Ling Cheng, Chien-Hung Lin, Gray Lin, Kien-Wen Sun, Chien-Ping Lee
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Micromachines
Subjects:
GaSb-based lasers
photonic crystals
surface-emitting lasers
infrared lasers
Online Access:https://www.mdpi.com/2072-666X/12/5/468

Internet

https://www.mdpi.com/2072-666X/12/5/468

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