Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process
The fabrication of highly qualified patterns for photomasks using an electron beam writer is one of the key methods to achieve the requirements for high-end semiconductor devices manufacturing. We demonstrate in-situ examination of morphology changes in the electron-beam resist using super-resolutio...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-06-01
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| Series: | Micro and Nano Engineering |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007223000102 |
| _version_ | 1797798693227724800 |
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| author | Sukjong Bae Flip de Jong Rik Nuyts Rahul Sasikumar Haifeng Yuan Seongjune Min Jin Choi Sanghee Lee Joonsoo Park Johan Hofkens |
| author_facet | Sukjong Bae Flip de Jong Rik Nuyts Rahul Sasikumar Haifeng Yuan Seongjune Min Jin Choi Sanghee Lee Joonsoo Park Johan Hofkens |
| author_sort | Sukjong Bae |
| collection | DOAJ |
| description | The fabrication of highly qualified patterns for photomasks using an electron beam writer is one of the key methods to achieve the requirements for high-end semiconductor devices manufacturing. We demonstrate in-situ examination of morphology changes in the electron-beam resist using super-resolution single-molecule fluorescence microscopy. An integrated scanning electron and fluorescence microscope was used to apply different e-beam doses on a PMMA model resist doped with fluorophores. The experiment shows that the density of fluorophores decreases at accumulated e-beam doses, revealed by the increasing average distances between the neighboring fluorophores before and after the e-beam treatment. The observation coincides with the film thinning in the e-beam treated sample area under AFM. Combining the data from super-resolution microscopy and AFM, we could identify different e-beam impact that is associated with e-beam doses. Particularly, we could observe certain degree of resist degradation outside the exposed area when high doses are applied. The degradation might be correlated to effects such as resist outgassing. This proof-of-concept illustrates a faster alternative method to AFM for characterizing the resist's morphological changes during e-beam processes. |
| first_indexed | 2024-03-13T04:08:42Z |
| format | Article |
| id | doaj.art-c0251609fd034b55b5cde3fe0458f653 |
| institution | Directory Open Access Journal |
| issn | 2590-0072 |
| language | English |
| last_indexed | 2024-03-13T04:08:42Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Micro and Nano Engineering |
| spelling | doaj.art-c0251609fd034b55b5cde3fe0458f6532023-06-21T06:58:52ZengElsevierMicro and Nano Engineering2590-00722023-06-0119100180Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning processSukjong Bae0Flip de Jong1Rik Nuyts2Rahul Sasikumar3Haifeng Yuan4Seongjune Min5Jin Choi6Sanghee Lee7Joonsoo Park8Johan Hofkens9Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, Belgium; Semiconductor R&D Center, Samsung Electronics. Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea; Corresponding author at: Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, Belgium.Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, BelgiumDepartment of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, BelgiumDepartment of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, BelgiumDepartment of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, BelgiumSemiconductor R&D Center, Samsung Electronics. Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of KoreaSemiconductor R&D Center, Samsung Electronics. Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of KoreaSemiconductor R&D Center, Samsung Electronics. Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of KoreaSemiconductor R&D Center, Samsung Electronics. Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of KoreaDepartment of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, 3001 Heverlee, BelgiumThe fabrication of highly qualified patterns for photomasks using an electron beam writer is one of the key methods to achieve the requirements for high-end semiconductor devices manufacturing. We demonstrate in-situ examination of morphology changes in the electron-beam resist using super-resolution single-molecule fluorescence microscopy. An integrated scanning electron and fluorescence microscope was used to apply different e-beam doses on a PMMA model resist doped with fluorophores. The experiment shows that the density of fluorophores decreases at accumulated e-beam doses, revealed by the increasing average distances between the neighboring fluorophores before and after the e-beam treatment. The observation coincides with the film thinning in the e-beam treated sample area under AFM. Combining the data from super-resolution microscopy and AFM, we could identify different e-beam impact that is associated with e-beam doses. Particularly, we could observe certain degree of resist degradation outside the exposed area when high doses are applied. The degradation might be correlated to effects such as resist outgassing. This proof-of-concept illustrates a faster alternative method to AFM for characterizing the resist's morphological changes during e-beam processes.http://www.sciencedirect.com/science/article/pii/S2590007223000102E-beam lithographyPhotomaskSuper resolution fluorescence microscopyE-beam resist |
| spellingShingle | Sukjong Bae Flip de Jong Rik Nuyts Rahul Sasikumar Haifeng Yuan Seongjune Min Jin Choi Sanghee Lee Joonsoo Park Johan Hofkens Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process Micro and Nano Engineering E-beam lithography Photomask Super resolution fluorescence microscopy E-beam resist |
| title | Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process |
| title_full | Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process |
| title_fullStr | Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process |
| title_full_unstemmed | Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process |
| title_short | Super-resolution fluorescence microscopy on E-beam resist film during electron beam exposure for mask patterning process |
| title_sort | super resolution fluorescence microscopy on e beam resist film during electron beam exposure for mask patterning process |
| topic | E-beam lithography Photomask Super resolution fluorescence microscopy E-beam resist |
| url | http://www.sciencedirect.com/science/article/pii/S2590007223000102 |
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