A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance
The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and analytical approach simultaneously. By introducing e...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/10/1244 |