Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al<sub>0.83</sub>In<sub&g...

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Bibliographic Details
Main Authors: Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Materials
Subjects:
double-channel metal oxide semiconductor high-electron mobility transistors
Ga<sub>2</sub>O<sub>3</sub> gate oxide layer
flicker noise
multiple-mesa-fin-channel array
vapor cooling condensation system
Online Access:https://www.mdpi.com/1996-1944/14/19/5474

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https://www.mdpi.com/1996-1944/14/19/5474

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