| Summary: | The paper presents the results of experiments on synthesis of SiC and C nanostructures by the method of
microwave plasma assisted chemical vapor deposition on Ni films. The plates of polished single-crystal and
porous silicon were used, on the surface of which a thin layer of Ni was deposited. The dependence of the
structure and morphology of the samples on the plasma power is studied. Scanning electron microscopy has
shown that the formed nanostructures have a diameter of 100-170 nm and a rough surface. Analysis of the
results showed that, the growth of nanostructures on the surface of porous silicon is more massive in contrast to
polished Si. By means of Raman scattering the structure of the obtained samples and its dependence on the
plasma power were studied. The results of studies showed the presence of silicon carbide nanostructures with
3C-SiC polytype structure. Also, the main carbon peaks in the range of ~1300 and ~1500 cm-1, which
correspond to carbon nanostructures were found on both types of substrates.
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