Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films
The paper presents the results of experiments on synthesis of SiC and C nanostructures by the method of microwave plasma assisted chemical vapor deposition on Ni films. The plates of polished single-crystal and porous silicon were used, on the surface of which a thin layer of Ni was deposited. The...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Al-Farabi Kazakh National University
2018-06-01
|
| Series: | Physical Sciences and Technology |
| Online Access: | http://phst/index.php/journal/article/view/126 |
| _version_ | 1797645320949071872 |
|---|---|
| author | A.K. Kenzhegulov B.Z. Mansurov B.S. Medyanova G. Partizan G.S. Suyundykova B.E. Zhumadilov U.P. Koztayeva Х. Jiang |
| author_facet | A.K. Kenzhegulov B.Z. Mansurov B.S. Medyanova G. Partizan G.S. Suyundykova B.E. Zhumadilov U.P. Koztayeva Х. Jiang |
| author_sort | A.K. Kenzhegulov |
| collection | DOAJ |
| description |
The paper presents the results of experiments on synthesis of SiC and C nanostructures by the method of
microwave plasma assisted chemical vapor deposition on Ni films. The plates of polished single-crystal and
porous silicon were used, on the surface of which a thin layer of Ni was deposited. The dependence of the
structure and morphology of the samples on the plasma power is studied. Scanning electron microscopy has
shown that the formed nanostructures have a diameter of 100-170 nm and a rough surface. Analysis of the
results showed that, the growth of nanostructures on the surface of porous silicon is more massive in contrast to
polished Si. By means of Raman scattering the structure of the obtained samples and its dependence on the
plasma power were studied. The results of studies showed the presence of silicon carbide nanostructures with
3C-SiC polytype structure. Also, the main carbon peaks in the range of ~1300 and ~1500 cm-1, which
correspond to carbon nanostructures were found on both types of substrates.
|
| first_indexed | 2024-03-11T14:44:40Z |
| format | Article |
| id | doaj.art-c054a82875284d078cdfce1ed01fb3a8 |
| institution | Directory Open Access Journal |
| issn | 2409-6121 |
| language | English |
| last_indexed | 2024-03-11T14:44:40Z |
| publishDate | 2018-06-01 |
| publisher | Al-Farabi Kazakh National University |
| record_format | Article |
| series | Physical Sciences and Technology |
| spelling | doaj.art-c054a82875284d078cdfce1ed01fb3a82023-10-30T13:11:17ZengAl-Farabi Kazakh National UniversityPhysical Sciences and Technology2409-61212018-06-0141Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni filmsA.K. KenzhegulovB.Z. MansurovB.S. MedyanovaG. PartizanG.S. SuyundykovaB.E. ZhumadilovU.P. KoztayevaХ. Jiang The paper presents the results of experiments on synthesis of SiC and C nanostructures by the method of microwave plasma assisted chemical vapor deposition on Ni films. The plates of polished single-crystal and porous silicon were used, on the surface of which a thin layer of Ni was deposited. The dependence of the structure and morphology of the samples on the plasma power is studied. Scanning electron microscopy has shown that the formed nanostructures have a diameter of 100-170 nm and a rough surface. Analysis of the results showed that, the growth of nanostructures on the surface of porous silicon is more massive in contrast to polished Si. By means of Raman scattering the structure of the obtained samples and its dependence on the plasma power were studied. The results of studies showed the presence of silicon carbide nanostructures with 3C-SiC polytype structure. Also, the main carbon peaks in the range of ~1300 and ~1500 cm-1, which correspond to carbon nanostructures were found on both types of substrates. http://phst/index.php/journal/article/view/126 |
| spellingShingle | A.K. Kenzhegulov B.Z. Mansurov B.S. Medyanova G. Partizan G.S. Suyundykova B.E. Zhumadilov U.P. Koztayeva Х. Jiang Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films Physical Sciences and Technology |
| title | Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films |
| title_full | Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films |
| title_fullStr | Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films |
| title_full_unstemmed | Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films |
| title_short | Investigation of SiC and C nanostructures synthesized by the method of chemical vapor deposition on Ni films |
| title_sort | investigation of sic and c nanostructures synthesized by the method of chemical vapor deposition on ni films |
| url | http://phst/index.php/journal/article/view/126 |
| work_keys_str_mv | AT akkenzhegulov investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT bzmansurov investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT bsmedyanova investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT gpartizan investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT gssuyundykova investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT bezhumadilov investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT upkoztayeva investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms AT hjiang investigationofsicandcnanostructuressynthesizedbythemethodofchemicalvapordepositiononnifilms |